Two-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology

Two-dimensional (2D) numerical simulation of low-frequency (1/f) noise is carried out in N-channel polysilicon thin film transistors biased from weak to strong inversion. Noise is simulated by Generation–Recombination processes. Simulation is based on the impedance field method of Shockley. A 2D analysis of the local noise level shows that contribution at grain boundaries dominates from weak to strong inversion. 1/f noise level in the bulk of the active layer is higher when devices are biased in the weak inversion. In the strong inversion contribution of sources close to the interface dominates.