Fault localization at high voltage devices using thermally induced voltage alteration (TIVA)

Conventional localization techniques such as photoemission microscopy (EMMI) or liquid crystal thermography (LCT) sometimes fail when applied to power semiconductor devices. Thermally induced voltage alteration (TIVA) is a good supplement to overcome difficulties which arise from high voltage (HV) in case of LCT. Missing transparency of the sample/missing photoemission are typical problems occurring during EMMI performed at power devices. In this paper case studies will be shown using a newly developed HV setup for TIVA which point out these advantages.