کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
547568 | 1450558 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal approach of defects generation on copper/organic dielectric interface due to SEM inspections
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Scanning electron microscopy (SEM) sometimes induce defects on samples during imaging. We study in this article the thermal effects of SEM views on the Cu/BCB interface, in focused ion beam (FIB) cross sections. Electrons can lead to local thermal power dissipation due to their deceleration and create delamination. A TEM lamella sample preparation method was also found to avoid this kind of delamination. In this case, the thermal dissipated power could be reduced due to the fact that a big part of the incoming electrons could go through the sample without interactions. Several thermal simulations (2D/3D) were carried out to estimate the field of temperatures under electron beam and to explain the Cu/BCB interface delamination.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 47, Issues 9–11, September–November 2007, Pages 1614–1618
Journal: Microelectronics Reliability - Volume 47, Issues 9–11, September–November 2007, Pages 1614–1618
نویسندگان
L. Dantas de Morais, F. Allanic, F. Roqueta, J.P. Rebrasse,