کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
547584 1450558 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
New developments of THERMOS3, a tool for 3D electro-thermal simulation of smart power MOSFETs
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
New developments of THERMOS3, a tool for 3D electro-thermal simulation of smart power MOSFETs
چکیده انگلیسی

In this work, we present a novel 3D electro-thermal simulation tool capable of taking into account also particular driving strategies of the electron device, as it may be the case of smart power MOSFETs where a control logic interacts with the power section and controls its dissipated power and temperature. As an example, a thermal shutdown circuit, capable of reading the temperature on chip and switching the device off if the latter reaches dangerous values, usually embedded within smart power devices used in automotive applications to drive direction light or small motors/actuators, is simulated to validate our approach.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 47, Issues 9–11, September–November 2007, Pages 1696–1700
نویسندگان
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