Determination of thermal resistance using Gummel measurement for InGaP/GaAs HBTs

In this paper, we propose a technique to determine thermal resistance of InGaP/GaAs heterojunction bipolar transistors (HBTs). The technique is based on Gummel measurement at only a few substrate temperatures. The major advantage of this technique is the simplicity in measurement, since the temperature-dependent parameter does not need to be determined for each device size. Therefore, when a number of devices need to be measured, this technique is less time-consuming. Another feature of this technique is the separation of the thermal resistance and emitter resistance, so that it is easier to optimize the emitter resistance. The result shown in this paper is measured from an InGaP/GaAs HBT, and is compared with another typical technique.