Investigation and comparison of analog figures-of-merit for TFET and FinFET considering work-function variation

• TFET exhibits superior variation immunity regarding the gm/IDS, Rout and intrinsic gain as compared with the FinFET counterparts.
• TFET exhibits comparable variability in gm and fT as compared with the FinFET counterparts.
• The correlations between pertinent parameters (e.g., gm and Rout) impacts on the variation immunity of important analog FOMs are analyzed.

This paper investigates and compares the impacts of metal-gate work-function variation on important analog figures-of-merit (FOMs) for TFET and FinFET devices using 3-D atomistic TCAD simulations. Our study indicates that, at 0.6 V supply voltage and 0.2 V gate-voltage overdrive, TFET exhibits superior variation immunity regarding transconductance to drain–current ratio (gm/IDS), output resistance (Rout) and intrinsic gain, and comparable variability in gm and cutoff frequency (fT) as compared with the FinFET counterparts. In addition, how the correlations between pertinent parameters (e.g., gm and Rout) impact the variation immunity of important analog FOMs are analyzed. Our study may provide insights for low-voltage analog design using TFET/FinFET technologies.