کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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548341 | 1450555 | 2008 | 4 صفحه PDF | دانلود رایگان |
Zr–N/Zr bilayered film as a diffusion barrier between Cu and Si is evaluated. The thermal stability of the diffusion barrier is investigated by annealing the Cu/Zr–N/Zr/Si samples in N2 for an hour. XRD, SEM and AES results for the above contact systems after annealing at 700 °C show that Cu film has preferential (1 1 1) crystal orientation and no diffraction peaks of Cu3Si and a Cu–Zr–Si ternary compound are observed for all Cu/Zr–N/Zr/Si contact systems. In addition, the atomic distribution of Zr and Si is evident and grows with increasing temperature up to 700 °C, which corresponds to the Zr–Si phase having low contact resistivity. Low contact resistivity and high thermal stability diffusion barrier can be expected by the application of the Zr–N/Zr bilayered film as a diffusion barrier between Cu and Si.
Journal: Microelectronics Reliability - Volume 48, Issues 11–12, November–December 2008, Pages 1800–1803