کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
548343 | 1450555 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of charge trapping/de-trapping induced operation lifetime degradation in triple SuperFlash® memory cell
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, through triple SuperFlash® cell, different results of high temperature operation lifetime (HTOL) after endurance cycling have been identified. Several factors affected this type device lifetime, including of program-erase cycling stress and bake procedure, are investigated. Due to special erase operation mode, a different behavior of charge trapping/de-trapping in triple SuperFlash® cell has been observed and analyzed. The mechanism which induced various HTOL results could be explained by the combined effects of voltage acceleration and electrons trapping/de-trapping behaviors during bake.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issues 11–12, November–December 2008, Pages 1809–1814
Journal: Microelectronics Reliability - Volume 48, Issues 11–12, November–December 2008, Pages 1809–1814
نویسندگان
Zigui Cao, Bo Zhang, Xiong Zhang, Elton Lee, Weiran Kong,