کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
548362 872209 2008 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Numerical and experimental analysis of EMI effects on circuits with MESFET devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Numerical and experimental analysis of EMI effects on circuits with MESFET devices
چکیده انگلیسی

This study develops theoretical formulae to model the time domain and frequency domain characteristics of the noise spectrum of a MESFET device induced by varying EMI conditions. The theoretical results are then compared with the experimental measurements. The experimental and numerical results reveal that the magnitude of the EMI-induced noise is related to the pulse height, the output load, the parasitic capacitance, the interference frequency and the interference amplitude. It is shown that a higher interference amplitude or frequency increases the harmonic noise. The theoretical method presented in this paper provides a convenient means of evaluating the EMI effects and signal-to-noise ratio (SNR) of MESFET and similar wavelength devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issue 4, April 2008, Pages 537–546
نویسندگان
,