کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
548363 872209 2008 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD
چکیده انگلیسی

A realistic full-band Monte Carlo (FBMC) model is applied to study the effect of doping concentration on multiplication gain and excess noise factor for electron- and hole-initiated multiplication in thin InP p+–i–n+ diodes with a range of multiplication lengths of w = 0.1 and 0.24 μm. This model predicts a reduction in excess noise factor for both electron- and hole-initiated multiplication as the doping concentration increases. Besides dead-space effect and feedback impact ionization, the electric field profile controlled by the doping concentration significantly contributes to the fall of excess noise in submicron InP p+–i–n+ diodes.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issue 4, April 2008, Pages 547–554
نویسندگان
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