کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
548366 872209 2008 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of length scaling on electromigration in dual-damascene copper interconnects
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Effects of length scaling on electromigration in dual-damascene copper interconnects
چکیده انگلیسی

The electromigration short-length effect in dual-damascene Cu interconnects has been investigated through experiments on lines of various lengths (L), being stressed at a variety of current densities (j), and using a technologically realistic three-level structure. This investigation represents a complete study of the short-length effect after a well-developed dual-damascene Cu process. Lifetime measurement and resistance degradation as a function of time were used to describe this phenomenon. It has been found that the sigma of log–normal distribution increased as the current density–length product decreased. The statistical distribution of the critical volume fits the sigma curve well. Lower jL2 values show large sigma values because of back-stress-induced TTF (time-to-fail) dispersion. A simplified equation is proposed to analyze the experimental data from various combinations of current density and line length at a certain temperature. The resulting threshold–length product (jL)C value appears to be temperature dependent, decreasing with an increase in temperature in a range of 250–300 °C.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issue 4, April 2008, Pages 569–577
نویسندگان
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