کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
548402 872214 2007 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Field returns, a source of natural failure mechanisms
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Field returns, a source of natural failure mechanisms
چکیده انگلیسی
Reliability investigations and product qualifications are typically built on a set of “standard” aging methods which are designed to extract degradation that can be statistically analyzed in order to predict lifetimes. This study is intended to reveal information about what actually happens to devices during use by the customer as determined by failure analysis. This information is provided as an account of experiences with supplier-customer relationships It is intended to describe expectations (from the supplier viewpoint) and to guide aging and qualification methodologies towards meeting those expectations. Comparisons to accelerated aging results are discussed. This work was initiated to provide a modern update to a similar paper entitled: “GaAs IC Reliability Returns: A Story of Abuse”. The original data was presented at the 1992 GaAs REL Workshop on October 4, 1992 in Miami Beach, Florida [Roesch Bill, Rubalcava AL, Winters RA. GaAs IC reliability returns: a story of abuse. In: GaAs REL Workshop, October 4, 1992, Miami Beach, Florida. p. 30-4. [1]].
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 47, Issue 8, August 2007, Pages 1156-1165
نویسندگان
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