کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
548419 872214 2007 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electromigration of Sn–37Pb and Sn–3Ag–1.5Cu/Sn–3Ag–0.5Cu composite flip–chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Electromigration of Sn–37Pb and Sn–3Ag–1.5Cu/Sn–3Ag–0.5Cu composite flip–chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy
چکیده انگلیسی

We examine electromigration fatigue reliability and morphological patterns of Sn–37Pb and Sn–3Ag–1.5Cu/Sn–3Ag–0.5Cu composite solder bumps in a flip–chip package assembly with Ti/Ni(V)/Cu UBM. The flip–chip test vehicle was subjected to test conditions of five combinations of applied electric currents and ambient temperatures, namely, 0.4 A/150 °C, 0.5 A/150 °C, 0.6 A/125 °C, 0.6 A/135 °C, and 0.6 A/150 °C. The electrothermal coupling analysis was employed to investigate the current crowding effect and maximum temperature in the solder bump in order to correlate with the experimental electromigration reliability using the Black’s equation as a reliability model. From available electromigration reliability models, we also present a comparison between fatigue lives of Sn–37Pb solder bumps with Ti/Ni(V)/Cu and those with Al/Ni(V)/Cu UBM under different current stressing conditions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 47, Issue 8, August 2007, Pages 1273–1279
نویسندگان
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