کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
548573 | 1450562 | 2006 | 6 صفحه PDF | دانلود رایگان |

In this paper, the study on silicon nano-mechanical electro-thermal probe array used for high-density storage has been performed. After the introduction of structure and working principle of the NEMS probe, the design of component followed by using both theoretical analysis and finite element analysis (FEA). By using advanced (micro-) nano-machining technology, the piezoresistive sensor and the resistive heater have been integrated on the silicon micro-cantilever and the component has been fabricated. Subsequently, the electro-thermal performance and sensitivity have been tested agreeing well with those simulated. About 31.6 Gb/in2 surface data-writing density was realized successfully on thin PMMA film by using AFM equipment with optimized thermal writing parameters.
Journal: Microelectronics Reliability - Volume 46, Issues 5–6, May–June 2006, Pages 805–810