Compact distributed multi-finger MOSFET model for circuit-level ESD simulation

• A distributed, compact MOSFET model for circuit-level ESD simulation includes a snapback model for each finger and a body resistance network to capture the non-constant body potential.
• A distributed model allows each finger to be biased differently from the others, resulting in better reproducibility of the ESD characteristics and pulsed I-V characteristic scaling with respect to the number of fingers and finger width;
• Non-uniform turn-on and non-uniform self-heating among the device fingers can be simulated.
• TCAD simulation confirms that the device fingers may carry unequal currents and have different temperatures; these effects are captured by the compact model.

This work presents a model for multi-finger MOSFETs operating under ESD conditions. It is a distributed model that can reproduce the effect of layout geometry on trigger voltage, on-state resistance, and non-uniform turn-on of device fingers. A three-terminal transmission line pulsing technique enables model parameter extraction. Analysis of measurement data and TCAD simulation reveals that self-heating is not uniform across the device, and this affects the relation between on-state resistance and the number of fingers. With self-heating incorporated, the model correctly reproduces the device I–V curve up to high current levels.