کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488531 | 1524102 | 2017 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Development of n-type Te-doped GaSb substrates with low carrier concentration for FPA applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Undoped GaSb is p-type with the residual acceptor concentration of about 1e17Â cmâ3 due to the gallium vacancies and gallium in antimony site. Counter-doping of GaSb with low level of Te can reduce the net carrier concentration resulting in higher optical transparency in a broad IR spectral range. In this work, the carrier concentration, mobility and sheet resistance of n-type and p-type Te-doped GaSb substrates were measured using Hall method at 300Â K and 77Â K. The Hall carrier concentration data at 300Â K were correlated with the absorption coefficients of GaSb in the IR spectral range. An empirical relationship between these values was established. Based on this correlation, we discuss application of FTIR spectroscopy for non-destructive optical screening of the substrates that allows construction of the carrier concentration distribution map across GaSb wafers. Investigations of the electronic properties of the low-doped p-type and n-type GaSb substrates upon cooling down to 77Â K indicate the reduction of the hole carrier concentration background for both GaSb types. This is evident from the decrease in the Hall-measured carrier concentration for p-type GaSb. For n-type GaSb, an increase in the carrier concentration is observed due to the reduction of the hole carrier concentration background.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 84, August 2017, Pages 38-42
Journal: Infrared Physics & Technology - Volume 84, August 2017, Pages 38-42
نویسندگان
K. Roodenko, P.-K. Liao, D. Lan, K.P. Clark, E.D. Fraser, P.W. Frensley, K.W. Vargason, J.-M. Kuo, Y.-C. Kao, P.R. Pinsukanjana,