کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488641 | 1524104 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical homogeneity analysis of Hg1âxCdxTe epitaxial layers: How to circumvent the influence of impurity absorption bands?
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
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چکیده انگلیسی
Optical absorption and photoluminescence spectroscopies are standard tools for analysis of HgHg1âxCdxTe epitaxial layers in terms of homogeneity of the mole-fraction (x). For technological relevant layer thicknesses of â¼10 μm, both techniques may show dissimilar results, in particular if doped layers are investigated. This is due to defect levels, which impact to the results obtained by both techniques in different ways. We systematically investigate this behavior by analyzing two sets of HgCdTe layers, one set intrinsically doped by Hg-vacancies, the other extrinsically doped by arsenic (As). A model is outlined and applied to the experimental results, which consistently explains even non-monotonous temperature-shifts of the spectra. Eventually, guidelines for optical homogeneity tests are given. While transmission measurements are most reliable, when carried out at low temperature, where the defect level are frozen out, photoluminescence provides best results at ambient temperature, where band-states are increasingly populated. Both approaches help to reveal intrinsic material properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 82, May 2017, Pages 1-7
Journal: Infrared Physics & Technology - Volume 82, May 2017, Pages 1-7
نویسندگان
Han Wang, Jin Hong, Fangyu Yue, Chengbin Jing, Junhao Chu,