کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488651 | 1524104 | 2017 | 20 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of annealing on structural, electrical and optical properties of p-quaterphenyl thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thin films of p-quaterphenyl are deposited by an evaporation technique. IR spectra confirm that the thermal evaporation method is a decent one to acquire p-quaterphenyl films without dissociation. The X-ray diffraction studies demonstrate that the as-deposited and annealed films are polycrystalline with monoclinic structure. The electrical conductivity shows an activated behavior and indicating that p-quaterphenyl behaves as an organic semiconductor. The value of activation energy decreases by annealing, which explains due to the adjustment in the crystallite size. Optical properties of p-quaterphenyl films were performed to determine some optical constants. Dispersion of the refractive index is described utilizing the Wemple-DiDomenico model. In addition, the third order nonlinear susceptibility and the nonlinear refractive index are calculated. The analysis of the absorption coefficient for the as-deposited film showed an allowed direct optical band gap with a value of 2.35Â eV, which decreased by annealing to 2.05Â eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 82, May 2017, Pages 96-100
Journal: Infrared Physics & Technology - Volume 82, May 2017, Pages 96-100
نویسندگان
A.A.A. Darwish,