کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488713 | 1524160 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of Fe insertion in CoFeB in the middle electrode on the properties of MgO double-barrier magnetic tunnel junctions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of Fe insertion in CoFeB in the middle electrode on the properties of MgO double-barrier magnetic tunnel junctions Effects of Fe insertion in CoFeB in the middle electrode on the properties of MgO double-barrier magnetic tunnel junctions](/preview/png/5488713.png)
چکیده انگلیسی
We successfully improved the tunnel magnetoresistance ratio (TMR) of an MgO/CoFeB/MgO-based double-barrier magnetic tunnel junction (DMTJ) by inserting ultra-thin Fe into a CoFeB middle electrode. The Fe played as an absorber of B diffused out of the CoFeB and thereby facilitated the crystallization of the CoFeB at the interface. Changes in resistivity of the middle electrode with Fe insertion calculated by the modified current-in-plane tunneling method suggested that they can be explained by the formation of Fe borides, which is ascribed to the fact that Fe indeed promoted the diffusion of B by providing places for the B diffusion. As a result, Fe insertion improved the (001) texture of the middle electrode and thereby increased the TMR of the junction due to enhanced coherent tunneling. However, when inserted Fe was thick, the tunnel properties of DMTJs were degraded because of the absence of strong (001) texture of MgO. Materials and their thickness for a middle electrode are key parameters to successful application of DMTJs for spin devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 17, Issue 12, December 2017, Pages 1571-1575
Journal: Current Applied Physics - Volume 17, Issue 12, December 2017, Pages 1571-1575
نویسندگان
Jongill Hong, Sangho Lee,