کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488714 | 1524160 | 2017 | 23 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors](/preview/png/5488714.png)
چکیده انگلیسی
The paper deals with trap effects in InAlN/AlN/GaN and AlGaN/AlN/GaN high electron mobility transistor structures using frequency dependent conductance and High-Low frequency capacitance analysis. We performed a comparative study on electrical characteristics of electron devices. Capacitance-voltage characteristics revealed hysteresis with a voltage shift that was attributed to the accumulation of charges at the InAlN/AlN and AlGaN/AlN heterointerfaces. Using a simple extraction method, a rather low density of trapped charges is evaluated. On the other hand, bias and frequency dependent measurements are carried out in the vicinity of threshold voltage to determine the interface trap density Dit, trap time constant Ïit and trap state energy position ET. It is found that device with InAlN barrier exhibits high trap state densities in the range of 1012 -1014Â cmâ2eVâ1, approximately one order of magnitude larger than with AlGaN barrier.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 17, Issue 12, December 2017, Pages 1601-1608
Journal: Current Applied Physics - Volume 17, Issue 12, December 2017, Pages 1601-1608
نویسندگان
S. Latrach, E. Frayssinet, N. Defrance, S. Chenot, Y. Cordier, C. Gaquière, H. Maaref,