کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488716 | 1524160 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced output power of InGaAs/GaAs infrared light-emitting diode with GaxIn1-xP tensile strain barrier
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Various GaxIn1-xP strain barriers were evaluated for their ability to compensate for the strain of lattice mismatched InGaAs/GaAs MQWs structures. A GaxIn1-xP (ÏÂ =Â 0.53) tensile strain barrier, which was inserted between the n-confinement and InGaAs/GaAs multi-quantum well (MQW) active region, was effective in reducing the compressive strain caused by In0.07GaAs in multiple quantum wells (MQWs). Importantly, a remarkably enhanced PL intensity was obtained by retuning the strain of In0.07GaAs QWs based on a Ga0.53InP tensile strain barrier. A fabricated IR-LED chip, having retuned In0.08GaAs/GaAs MQWs with a Ga0.53InP tensile strain barrier, yielded double the light output power of the IR-LED chip without a Ga0.53InP strain barrier. This suggests that the use of a Ga0.53InP tensile strain barrier is essential for compensating for the compressive strain of lattice-mismatched InGaAs/GaAs MQWs with a 940Â nm emitting wavelength, followed by the improved output power of the IR-LED chips.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 17, Issue 12, December 2017, Pages 1582-1588
Journal: Current Applied Physics - Volume 17, Issue 12, December 2017, Pages 1582-1588
نویسندگان
Hyung-Joo Lee, In-Kyu Jang, Won-Chan An, Lee Ku Kwac, Hong-Gun Kim, Joon Seop Kwak,