کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5488745 1399582 2017 20 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The structural analysis of MWCNT-SiO2 and electrical properties on device application
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
The structural analysis of MWCNT-SiO2 and electrical properties on device application
چکیده انگلیسی
Al/MWCNT-SiO2/p-Si device were obtained using chemical techniques and characterized using the I-V (under dark and light conditions) and C-V measurements depending on various frequency. MWCNT-SiO2 composite layer of the device were also characterized using XRD, FTIR, SEM, TEM and TGA measurements. These all results indicated that the MWCNT-SiO2 layer synthesized successfully on Si wafer as a composite form with chemical processes and spin coating. I-V measurements showed that device has good rectifying properties, small saturation current and good photodiode properties. Solar cell conversion efficiency (ηp) and fill factor (FF) values of the device also were calculated as 0.12% and 47.6%, respectively. It could be seen from C-V measurements that capacitance and conductance properties of the device strongly depended on frequency and voltage. It may be used and improved this device as rectifier, photodiode and capacitor in the future.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 17, Issue 9, September 2017, Pages 1215-1222
نویسندگان
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