Rectifying electronic transport and the role of Fowler-Nordheim tunneling in Ag/PVDF/Au capacitor structures

The electron transport through β phase dominant Polyvinylidene fluoride (PVDF) thin films in its intrinsic form is investigated and reports the stable rectification up to ±30 V in Ag/PVDF/Au capacitor structures. A practical resistance ratio of ∼40 between −1 V and 1 V and a maximum ratio of ∼77 at −24 V and 24 V exhibits its potential usage in selector devices. Furthermore, the nonpolar electronic transport is analysed with Schottky, Space Charge Limited Current (SCLC), Poole-Frenkel (PF) and Fowler-Nordheim (FN) tunneling mechanisms with respect to electrode, thickness and temperature variations.