Logarithmic temperature dependence of resistivity in CVD graphene

Logarithmical increase of the longitudinal resistivity (ρxx) between 10 K and 80 K and its saturation at low temperature were observed in the graphene synthesized by the chemical vapor deposition (CVD) with various applied gate voltage. In the two-dimensional system, it is considerably difficult to identify the origin of the logarithmic temperature (Log-T) increase of the resistivity, because there are three corrections to exhibit the Log-T behavior: the weak localization, the electron-electron interaction (EEI) in the disordered system and the Kondo effect. In order to distinguish the origin of the Log-T behavior, we contrived a new method utilizing the magnetotransport property in tilted magnetic fields. As a result, we have assigned the Log-T behavior in the CVD graphene to the correction of the EEI.