کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488922 | 1399590 | 2017 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650Â mT external magnetic field
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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![عکس صفحه اول مقاله: Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650Â mT external magnetic field Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650Â mT external magnetic field](/preview/png/5488922.png)
چکیده انگلیسی
We investigate the effects of an externally applied magnetic field on the terahertz (THz) emission of Gallium Manganese Arsenide (GaMnAs) films grown via molecular beam epitaxy (MBE). Results show that low Mn-doping in GaMnAs resulted to increased THz emission as compared with a SI-GaAs substrate. Further increase in Mn-doping content resulted to a comparably less THz emission, which is attributed to reduced crystallinity and higher free-carrier absorption. Under an external magnetic field, the contributions of the Bup and Bdown-related THz emission were observed to be asymmetric: possibly due to intrinsic magnetic properties of GaMnAs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 17, Issue 4, April 2017, Pages 522-526
Journal: Current Applied Physics - Volume 17, Issue 4, April 2017, Pages 522-526
نویسندگان
Alexander De Los Reyes, Elizabeth Ann Prieto, Karim Omambac, Jeremy Porquez, Lorenzo Jr., Karl Cedric Gonzales, John Daniel Vasquez, Mae Agatha Tumanguil, Joselito Muldera, Kohji Yamamoto, Masahiko Tani, Armando Somintac, Elmer Estacio, Arnel Salvador,