کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488953 | 1399591 | 2017 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells](/preview/png/5488953.png)
چکیده انگلیسی
Resistive random access memory (RRAM) devices have emerged as promising candidates for near future nonvolatile information storage. Eggshells, a food waste, have not been focused and recycled sustainably today. Eggshell-based devices have shown a large resistive-switching(RS) memory behaviors with favorable resistance ratio of â¼103, larger memory window of â¼3.5Â V, and high endurance and retention performance. Redox-based Ag filament models involving the formation and rupture of the metallic conduction filaments between top and bottom electrodes are proposed to interpret the large nonvolatile bipolar RS memory behaviors. This discovery provides for the possibility of an environmentally friendly, low-cost and sustainable material application in the next-generation nonvolatile date storage device.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 17, Issue 2, February 2017, Pages 235-239
Journal: Current Applied Physics - Volume 17, Issue 2, February 2017, Pages 235-239
نویسندگان
Guangdong Zhou, Bai Sun, Ankun Zhou, Bo Wu, Haishen Huang,