کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488999 | 1399593 | 2016 | 30 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Manipulation of electrical properties in CVD-grown twisted bilayer graphene induced by dissociative hydrogen adsorption
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report hydrogen adsorption on twisted bilayer graphene (tBLG). Raman spectroscopy and the electrical transport properties (electrical resistance and thermoelectric power) confirm the electron doping by hydrogen adsorption, in agreement with the previous report involving exfoliated bilayer graphene (BLG). Common electron doping behaviors were observed at various twist angles (0°, 5°, 12.5°, and 30°), and the adsorptions follow the first-order Langmuir-type adsorption model. Specifically, we analyzed the off-state currents, with band-gap openings of around 13 meV in tBLG with twist angle of 0°, as in Bernal-stacked BLG.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 16, Issue 12, December 2016, Pages 1637-1641
Journal: Current Applied Physics - Volume 16, Issue 12, December 2016, Pages 1637-1641
نویسندگان
Sung Ju Hong, Min Park, Hojin Kang, Minwoo Lee, David Soler-Delgado, Dae Hong Jeong, Yung Woo Park, Byung Hoon Kim,