کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489015 | 1399594 | 2017 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of carriers localized in clusters on optical properties of In0.21Ga0.79As/GaAs multiple quantum wells
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In0.21Ga0.79As multiple quantum wells MQW, with different well thickness L, are grown on [001] and [113] A GaAs growth directions by molecular beam epitaxy MBE. An asymmetric photoluminescence PL line shape denoted LEA and LEB in the lower energies side has been observed in both structures. These emissions of deep localized states can be related to the energy potential modulation associated to Indium cluster formation. Temperature dependence of photoluminescence properties has been reported. Localized state ensemble LSE model has investigated atypical behaviors of PL peak energies and the full width at half maximum FWHM of both emissions. These abnormal behaviors are explained by carriers captured by localized recombination centers. Competition processes between localized and delocalized excitons have been occurred to interpret the PL properties. The degree of localization induced by quantum-dot-like states and critical temperatures between different temperatures regions increase as far as away [001] growth direction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 17, Issue 1, January 2017, Pages 1-5
Journal: Current Applied Physics - Volume 17, Issue 1, January 2017, Pages 1-5
نویسندگان
Ibtissem Fraj, Tarek Hidouri, Faouzi Saidi, Lotfi Bouzaiene, Larbi Sfaxi, Hassen Maaref,