کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
548921 872300 2015 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The effect of various concentrations of PVDF-HFP polymer gel electrolyte for dye-sensitized solar cell
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
The effect of various concentrations of PVDF-HFP polymer gel electrolyte for dye-sensitized solar cell
چکیده انگلیسی

A PVDF-HFP gel electrolytes based DSSCs were fabricated successfully, where gel electrolytes with 2.5 wt.%, 5 wt.%, 10 wt.% and 15 wt.% PVDF-HFP are included, respectively. Linear sweep voltammetry (LSV), photocurrent–voltage measurements and electrochemical impedance spectra (EIS) were measured. As the results shown, the apparent diffusion coefficient (Dapp) of I− and I3− decreased as PVDF-HFP increased. Dapp of I− and I3− are decreased from 1.87 × 10− 6 to 0.67 × 10− 6 cm2/s and 3.28 × 10− 6 to 0.88 × 10− 6 cm2/s, respectively. For the solar cell measurements, the short circuit current density (Jsc) were affected by the ion motilities, which was decreased from 11.58 mA/cm2 to 8.17 mA/cm2, and the energy converting efficiency (η %) was decreased from 5.17% to 2.79%. For electrochemical impedance spectra (EIS) measurements, the ionic diffusion impedance for the redox-couple (I−/I3−) in the gel electrolyte was also increased with the concentration of PVDF-HFP from 0.61 Ω to 8.17 Ω. In the Bode Plots, the electron lifetime (τe) of the 2.5 wt.% and 5 wt.% PVDF-HFP electrolytes was increased from 40.52 ms to 48.48 ms and 41.29 ms, respectively. However, τe was decreased in the concentrations of 10 wt.% and 15 wt.% PVDF-HFP, due to the ion motilities that were decreased by excessing PVDF-HFP polymer. For gel electrolyte, the cell of 2.5 wt.% PVDF-HFP exhibited a better JSC of 10.89 mA/cm2, a higher energy conversion efficiency (η) of 4.75%, a higher fill factor (FF) of 61.26%, and a smaller R of 1.06 Ω than the 15 wt.% PVDF-HFP based cell.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 55, Issue 11, November 2015, Pages 2174–2177
نویسندگان
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