کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
548931 | 872300 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation on SCR-based ESD protection device for biomedical integrated circuits in a 0.18-μm CMOS process
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In these decades, integrated circuits for biomedical electronics applications have been designed and implemented in CMOS technologies. In order to be safely used by human, all microelectronic products must meet the reliability specifications. Therefore, electrostatic discharge (ESD) must be taken into consideration. To protect the biomedical integrated circuits in CMOS technologies from ESD damage, a dual-directional silicon-controlled rectifier (DDSCR) device was presented in this work. Experimental results show that the DDSCR has the advantages of high ESD robustness, low leakage, large swing tolerance, and good latchup immunity. The DDSCR was suitable for ESD protection in biomedical integrated circuits.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 55, Issue 11, November 2015, Pages 2229–2235
Journal: Microelectronics Reliability - Volume 55, Issue 11, November 2015, Pages 2229–2235
نویسندگان
Chun-Yu Lin, Yan-Lian Chiu,