SET and noise fault tolerant circuit design techniques: Application to 7 nm FinFET

• We analyse several techniques to harden radiation effects and noise immunity.
• We implement these techniques using 7 nm FinFET technology.
• A new design methodology is presented, called Strengthening.
• This design style is technology’s independent.
• Strengthening presents the best immunity in a noise environment.

In the near future of high component density and low-power technologies, soft errors occurring not only in memory systems and latches but also in the combinational parts of logic circuits will seriously affect the reliable operation of integrated circuits. This paper presents a novel design style which reduces the impact of radiation-induced single event transients (SET) on logic circuits, and enhances the robustness in noisy environments. The independent design style of this method achieves SET mitigation and noise immunity by strengthening the sensitive nodes using a technique similar to feedback. A realization for this methodology is presented in 7 nm FinFET and in order to check the accuracy of our proposal, we compare it with others techniques for hardening radiation at the transistor level against a single event transient. Simulation results show that the proposed method has a good soft error tolerance capability as well as better noise immunity.