کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
549023 1450549 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A nonlinear degradation path dependent end-of-life estimation framework from noisy observations
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
A nonlinear degradation path dependent end-of-life estimation framework from noisy observations
چکیده انگلیسی


• Accurate device/circuit reliability estimation based aging compensation/mitigation is crucial to advanced technology node designs.
• The paper proposes a device/circuit reliability (end-of-life) Bayesian estimation framework.
• The degradation process nonlinearities and measurement sensors uncertainty are considered to better capture the device aging dynamics.
• The framework is validated; its estimation accuracy is assessed and it outperforms equivalent state of the art proposals.
• The end-of-life estimation for a PMOS transistor affected by front-end-of-life induced aging, e.g., NBTI, HCI, is presented as real life case study.

For the current advanced technology nodes, the end-of-life and reliability statistics estimation is regarded as a key component of devices dynamic reliability management frameworks. An accurate estimation can enable effective lifetime management via adopting appropriate mission profile specific policies. This paper proposes an end-of-life and reliability estimation framework, which takes into account the nonlinearities of the degradation process, as well as the sensors measurements and degradation process uncertainty, aiming to characterize more realistically the devices aging dynamics. Based on the degradation history, the estimation results are updated adaptively via the Bayesian method, once new degradation measurement data are provided. In order to validate and assess the estimation accuracy of the proposed framework, numerical simulations were performed on a power law degradation model. The obtained results for the considered nonlinear degradation process, reveal that, when compared with commonly employed Wiener processes with linear mean, our approach exhibits improved estimation accuracy. Thus, it may be better suited to capture the nonlinearity and variability of in-field degradation dynamics and further to assess/predict the devices reliability in a more realistic manner.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 53, Issues 9–11, September–November 2013, Pages 1213–1217
نویسندگان
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