کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5490244 | 1524779 | 2017 | 27 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic and thermoelectric properties of nonmagnetic inverse Heusler semiconductors Sc2FeSi and Sc2FeGe
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The electronic and thermoelectric properties of two nonmagnetic Hg2CuTi-type or called inverse Heusler semiconductors Sc2FeSi and Sc2FeGe are predicted by using first principles calculations and Boltzmann transport theory. The band gaps of Sc2FeSi and Sc2FeGe are 0.54 eV and 0.60 eV, respectively. Their zero total magneticmoments both satisfy the Mt = Zt-18 while not the Mt = Zt-24 rule. The good thermoelectric properties are achieved under the condition of electron doping. At the room temperature 300 K, the peak value of Seebeck coefficient is â592.02 μVKâ1 for Sc2FeSi, and â609.38 μVKâ1 for Sc2FeGe by electron doping. The maximum power factor is 48.77(1014 μW cmâ1 Kâ2 sâ1) for Sc2FeSi and 47.11(1014 μW cmâ1 Kâ2 sâ1) for Sc2FeGe with electron doping concentration â2.29 Ã 1026 mâ3 and â2.42 Ã 1026 mâ3, respectively, which are close to the power factor of well-known thermoelectric material Bi2Te3, indicating their potential applying values for thermoelectric devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 442, 15 November 2017, Pages 371-376
Journal: Journal of Magnetism and Magnetic Materials - Volume 442, 15 November 2017, Pages 371-376
نویسندگان
Jie Li, Guang Yang, Yanmin Yang, Hongran Ma, Qiang Zhang, Zhidong Zhang, Wei Fang, Fuxing Yin, Jia Li,