Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

• Resistive Switching is studied in p/n MOSFETs with ultrathin Hf-based dielectric.
• Resistive Switching observation depends on the polarity of set and reset voltages.
• In particular cases a negative shift of threshold voltage at the HRS is observed.
• Deeper understanding of resistive switching from a reliability point of view.

In this work, the Resistive Switching (RS) phenomenon in n and pMOSFETs with ultrathin Hf based high-k dielectric is studied. Two different conductive levels, a high (HRS) and a low (LRS) resistance states can be distinguished in the dielectric. The influence of the voltage polarities applied to reach the HRS and the LRS on the RS phenomenology is analyzed. The drain current–drain voltage and drain current–gate voltage transistor characteristics during the HRS have also been analyzed in those cases where the RS has been observed. The results can be useful to understand the effect of the RS on the MOSFETs performance from a reliability point of view.