کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
549041 1450549 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET
چکیده انگلیسی


• A new TCAD tool taking into account dose effects is presented: E.CO.R.C.E.
• We model Total Ionizing Dose on power MOSFET.
• Total Ionizing Dose at room temperature can be modeled using only one trap level.
• Four traps levels are needed to model temperature effects during irradiation.
• Traps parameters can be quickly estimated using a simple 1D MOS capacitor.

A new TCAD modeling tool taking into account dose effects is presented: E.CO.R.C.E. It allows a study of dose and temperature dependence on a power MOSFET. Modeling results are compared to experimental data. It is shown that threshold voltage shift at room temperature can be modeled with a good accuracy using only one hole trap level. However, temperature effect on threshold voltage shift cannot be fitted with less than four hole traps levels. More generally, this tool allows a better understanding of mechanisms involved during irradiation.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 53, Issues 9–11, September–November 2013, Pages 1306–1310
نویسندگان
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