کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
549041 | 1450549 | 2013 | 5 صفحه PDF | دانلود رایگان |

• A new TCAD tool taking into account dose effects is presented: E.CO.R.C.E.
• We model Total Ionizing Dose on power MOSFET.
• Total Ionizing Dose at room temperature can be modeled using only one trap level.
• Four traps levels are needed to model temperature effects during irradiation.
• Traps parameters can be quickly estimated using a simple 1D MOS capacitor.
A new TCAD modeling tool taking into account dose effects is presented: E.CO.R.C.E. It allows a study of dose and temperature dependence on a power MOSFET. Modeling results are compared to experimental data. It is shown that threshold voltage shift at room temperature can be modeled with a good accuracy using only one hole trap level. However, temperature effect on threshold voltage shift cannot be fitted with less than four hole traps levels. More generally, this tool allows a better understanding of mechanisms involved during irradiation.
Journal: Microelectronics Reliability - Volume 53, Issues 9–11, September–November 2013, Pages 1306–1310