Characterization and modeling of laser-induced single-event burn-out in SiC power diodes

• We investigate Single-Event Burn-out in SiC power diodes using two photon laser testing.
• Two-photon absorption at blue wavelength can induce burn-out in SiC diodes.
• A simple model of laser induced current leading to the failure mechanism is proposed.

We present results of laser testing of radiation-induced single event burn-out (SEB) in two 600 V Silicon Carbide Schottky power diodes using two-photon absorption at blue wavelength. Transient currents and destructive events are observed and analyzed. A simple physical model of the laser induced current in the tested devices is proposed to evaluate the impact of experimental parameters on the occurrence of an SEB.