Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell

• We demonstrate the impact of NBTI on the Single-Event Upset threshold of a 65nm SRAM cell.
• The SEU threshold measured by laser testing decreases over time after NBTI accelerated stress.
• On the tested device, this effect seems to be a concern only for long-term space missions.

This paper presents experimental characterization of the impact of negative bias temperature instability on the single-event upset sensitivity of SRAM cells embedded in a 65 nm CMOS test vehicle. Pre and post-aging SEU threshold laser energy measurements indicate that the cells sensitivity increases over time. The results are confirmed by electrical simulation and the consequences in terms of SEU rate prediction are discussed.