Field-effect control of breakdown paths in HfO2 based MIM structures

• HfO2 based MIM structures are used to explore the field-effect control of BD paths.
• Experimental results are supported by the QPC model of the post-BD conduction.
• The results suggest the feasibility of the field-effect control through BD paths.
• Simulations based on top of the barrier model confirm the reported field-effect.

The field-effect control of the conduction through dielectric breakdown paths is explored in lateral W/HfO2/W nanogap structures. The lateral size of the conducting filament is controlled by changing the current compliance during the voltage-ramp stress used to induce the breakdown. Partial destruction of the breakdown path is also shown to be possible by using a partial reset methodology. The results suggest that field-effect control of the breakdown path conduction is feasible. However, the capacitive coupling of the gate to the conducting filament is much smaller than that of drain and source due to unavoidable constraints associated with the considered test structures. As a consequence, extreme short channel effects limit the gate control of the filament conduction as demonstrated by simulations based on the top-of-the-barrier electrostatic model for nanowire transistors.