کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5490508 | 1524780 | 2017 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spin-dependent transport in GaAs nanowire-based devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Spin-dependent transport in GaAs nanowire-based devices Spin-dependent transport in GaAs nanowire-based devices](/preview/png/5490508.png)
چکیده انگلیسی
The transport properties of GaAs nanowire (NW)-based devices are investigated using non-equilibrium Green's function technique combined with density functional theory (DFT). Two types of NW-based devices are studied, which include the electrodes that are made of half-metallic GaMnAs NWs grown along the [0Â 0Â 0Â 1] direction, and the scattering region that consists of a tunneling structure (GaMnAs/GaAs/GaMnAs) or a conducting structure (GaMnAs/GaAs:Be/GaMnAs), respectively. The proposed nanostructures both exhibit robust transport properties including spin-filtering, negative differential resistance (NDR) and giant magnetoresistance (GMR) effects, which are further analyzed with carrier channels and transmission spectra. These structures imply potential applications for low dimensional semiconductor spintronic devices such as spin valve.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 441, 1 November 2017, Pages 678-682
Journal: Journal of Magnetism and Magnetic Materials - Volume 441, 1 November 2017, Pages 678-682
نویسندگان
Lidong Deng, Chenhui Zhang, Gang Xiang,