کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
549060 | 1450549 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
XEBIC at the Dual Beam
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
• A new approach for recording EBIC embedded in a Dual Beam system is presented.
• The technique was applied to drive TEM preparation in FA studies of a leaky junction.
• Possibility of 3D EBIC tomography of P-N junction is showed.
After its golden age during the decades of the development of Silicon IC technology, nowadays Electron Beam Induced Current (EBIC) technique comes back to importance mostly on photonic and high speed electron devices based on compound semiconductors. A new approach for recording a fast EBIC embedded in a Dual Beam system is presented.The combined use of multi-slicing FIB, SEM and EBIC enables 3D tomography of P–N junctions and drives TEM preparation in failure analysis studies of leaky junctions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 53, Issues 9–11, September–November 2013, Pages 1399–1402
Journal: Microelectronics Reliability - Volume 53, Issues 9–11, September–November 2013, Pages 1399–1402
نویسندگان
M. Vanzi, S. Podda, E. Musu, R. Cao,