GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing

• Two power GaAs P-HEMT processes using Ku Band amplifiers were submitted to heavy ion radiation stress test.
• Test sequences were conducted on samples simultaneously irradiated and under RF overdrive inputs.
• No failure was observed after the test sequences up to the device maximum rating limits.
• The two processes were considered safe with respect to the heavy ion stress.

Two European GaAs power P-HEMT MMIC processes using representative test structures have been characterized in situ when irradiated by high energy heavy ion radiation beam (420 MeV Xenon source, LET = 46.6 MeV cm2/mg), and under various worst case bias including DC and high drive RF conditions applied. The test methodology conducted has been carefully defined in order to help to early discriminate failure mechanisms induced by biasing stresses from those possibly induced by heavy ion irradiation environment. It is demonstrated that the two P-HEMT processes tested under worst case application biasing conditions (both cumulated DC and RF) are immune to heavy ion radiation stress representative of harsh space environments.