Failure analysis and detection methodology for capacitive RF-MEMS switches based on BEOL BiCMOS process

• Failure investigation methodology dedicated to RF-MEMS switches on 250nm BEOL CMOS.
• The focus is devoted to the effects technology dispersions on stress induced deformations.
• The failure analysis by coupling a optical profilometer to accurate electrical model.
• Real time monitoring of the device functional behavior and early failure detection.
• The study based on failure criteria coming from industrial space applications.

A novel failure investigation methodology dedicated to RF-MEMS capacitive switches based on a 250 nm BiCMOS BEOL technology is here presented. The failure analysis is carried out consistently by coupling a time-effective experimental investigation tool (profilometer) to a very accurate electrical model (lumped element equivalent circuit), enabling a real time monitoring of the device functional behavior. Owing to its compatibility with in line testing this approach facilitate the identification early failure detection, hence of the process yield. Moreover the availability of clear failure criteria defined upon the specific industrial application targeted by this study, has allows to test its validity in lifetime testing.