Fully Valley/spin polarized current and Fano factor through the Graphene/ferromagnetic silicene/Graphene junction

In this work, we study the transport properties of Dirac fermions through the ferromagnetic silicene which is sandwiched between the Graphene leads (G/FS/G). Spin/valley conductance, spin/valley polarization, and also Fano factor are theoretically calculated using the Landauer-Buttiker formula. We find that the fully valley and spin polarized currents through the G/FS/G junction can be obtained by increasing the electric field strength and the length of ferromagnetic silicene region. Moreover, the valley polarization can be tuned from negative to positive values by changing the electric field. We find that the Fano factor also changes with the spin and valley polarization. Our findings of high controllability of the spin and valley transport in such a G/FS/G junction the potential of this junction for spin-valleytronics applications.