Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs

The characteristics of transient temperature under the pulse on and cycle pulse mode are studied for GaN-based HEMT. The increase of channel transient temperature under pulse operation for different rising time, duty cycle and frequency has been determined using physical-based simulations, respectively. The results show that the peak temperature in pulse mode with the same operating frequency increases with the duty cycle under quasi-steady-state, but the changing rate decreases as the temperature goes up. The maximum of peak temperature change in one cycle is reached at 50% duty cycle. For the pulse with the same duty cycle, the peak temperature decreases as the frequency increases under quasi-steady-state, while the changing rate slows down. The results can be used to improve the lifetime and performance reliability.

► The transient temperature under cycle pulse mode is studied for GaN-based HEMT.
► The channel transient temperature under pulse operation has been determined.
► The peak temperature increases with the duty cycle, but the changing rate decreases.
► The peak temperature decreases with frequency, but the changing rate slows down.
► The results can be used to improve the lifetime and performance reliability.