کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
549209 872348 2012 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Measurement of thermal resistance of first-level Cu substrate used in high-power multi-chips LED package
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Measurement of thermal resistance of first-level Cu substrate used in high-power multi-chips LED package
چکیده انگلیسی

The thermal resistance of the first-level Cu dissipation substrate (RCu) with different Cu thickness is investigated in this work. Using the “constant-forward-voltage” method, the thermal resistances of the first-level Cu dissipation substrates (RCu) were measured against different Cu thickness. In the initial increase in the Cu thickness (up to 0.6 mm), RCu decreases with the Cu thickness. As the Cu thickness over 0.6 mm, RCu starts to slightly increase with the Cu thickness. The thermal resistance (RCu) of the Cu substrate is composed of the z-direction thermal resistance (Rz) and the two-dimensional horizontal spreading resistance (Rs). The initial decrease in RCu should attribute to the decrease in Rs with the Cu thickness. After the initial increase in RCu, the RCu would increase and be dominated by the Rz increase with the Cu thickness. Intriguingly, a minimum RCu value occurs at the Cu thickness of about 0.6 mm. Also, in this paper, we discuss the possible inaccuracy factors of the “constant-forward-voltage” method.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 52, Issue 5, May 2012, Pages 855–860
نویسندگان
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