کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
549210 872348 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improvement of thermal management of high-power GaN-based light-emitting diodes
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Improvement of thermal management of high-power GaN-based light-emitting diodes
چکیده انگلیسی

The thermal management of high-power light-emitting-diode (LED) devices employing various die-attach materials is analyzed. Three types of die-attach materials are tested, including silver paste, Sn–3 wt.% Ag–0.5 wt.% Cu (SAC305) solder, and SAC305 solder added with a small amount of carbon nanotubes (CNTs). The analysis of thermal management is performed by comparing the temperatures of the LED chips in use and the total thermal resistances of the LED devices obtained respectively from the thermal infrared images and thermal transient analysis. Due to the high thermal conductivity of CNT, the addition of CNTs into the SAC305 solder reduces the total thermal resistance and chip temperature of the LED device, and the thermal management of the LED devices is improved accordingly.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 52, Issue 5, May 2012, Pages 861–865
نویسندگان
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