کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5492511 | 1526249 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
First fabrication of a silicon vertical JFET for power distribution in high energy physics applications
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: First fabrication of a silicon vertical JFET for power distribution in high energy physics applications First fabrication of a silicon vertical JFET for power distribution in high energy physics applications](/preview/png/5492511.png)
چکیده انگلیسی
A new vertical JFET transistor has been recently developed at the IMB-CNM, taking advantage of a deep-trenched 3D technology to achieve vertical conduction and low switch-off voltage. The silicon V-JFET transistors were mainly conceived to work as rad-hard protection switches for the renewed HV powering scheme (HV-MUX) of the ATLAS upgraded tracker. This work presents the features of the first batch of V-JFETs produced at the IMB-CNM clean room, together with the results of a full pre-irradiation characterization of the fabricated prototypes. Details of the technological process are provided and the outcome quality is also evaluated with the aid of reverse engineering techniques. Concerning the electrical performance of the prototypes, promising results were obtained, already meeting most of the HV-MUX specifications, both at room and below-zerotemperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 877, 1 January 2018, Pages 269-277
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 877, 1 January 2018, Pages 269-277
نویسندگان
Pablo Fernández-MartÃnez, D. Flores, S. Hidalgo, D. Quirion, R. Durà , M. Ullán,