کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5492547 | 1526255 | 2017 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A process modification for CMOS monolithic active pixel sensors for enhanced depletion, timing performance and radiation tolerance
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
For the upgrade of its Inner Tracking System, the ALICE experiment plans to install a new tracker fully constructed with monolithic active pixel sensors implemented in a standard 180Â nm CMOS imaging sensor process, with a deep pwell allowing full CMOS within the pixel. Reverse substrate bias increases the tolerance to non-ionizing energy loss (NIEL) well beyond 10131MeVneqâcm2, but does not allow full depletion of the sensitive layer and hence full charge collection by drift, mandatory for more extreme radiation tolerance. This paper describes a process modification to fully deplete the epitaxial layer even with a small charge collection electrode. It uses a low dose blanket deep high energy n-type implant in the pixel array and does not require significant circuit or layout changes so that the same design can be fabricated both in the standard and modified process. When exposed to a 55Fe source at a reverse substrate bias of â6Â V, pixels implemented in the standard and the modified process in a low and high dose variant for the deep n-type implant respectively yield a signal of about 115Â mV, 110Â mV and 90Â mV at the output of a follower circuit. Signal rise times heavily affected by the speed of this circuit are 27.8+ââ5Â ns, 23.2+ââ4.2Â ns, and 22.2+ââ3.7Â ns rms, respectively. In a different setup, the single pixel signal from a 90Sr source only degrades by less than 20% for the modified process after a 10151MeVneqâcm2 irradiation, while the signal rise time only degrades by about 16+ââ2Â ns to 19+ââ2.8Â ns rms. From sensors implemented in the standard process no useful signal could be extracted after the same exposure. These first results indicate the process modification maintains low sensor capacitance, improves timing performance and increases NIEL tolerance by at least an order of magnitude.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 871, 1 November 2017, Pages 90-96
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 871, 1 November 2017, Pages 90-96
نویسندگان
W. Snoeys, G. Aglieri Rinella, H. Hillemanns, T. Kugathasan, M. Mager, L. Musa, P. Riedler, F. Reidt, J. Van Hoorne, A. Fenigstein, T. Leitner,