Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer

► A novel GaAs E/D-mode pHEMT technology was developed. ► The MIMS-gate insulator was high-k praseodymium oxide. ► This E-mode pHEMTs exhibit a gate VON of +1 V and a breakdown voltage of −5.6 V. ► These values were +7 V and −34 V for MIMS-gate D-mode pHEMTs, respectively. ► This high-k insulator in D-mode pHEMT can suppress the gate leakage current.