کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
549292 872353 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Temperature dependence of neutron-induced soft errors in SRAMs
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Temperature dependence of neutron-induced soft errors in SRAMs
چکیده انگلیسی

We irradiated commercial SRAMs with wide-spectrum neutrons at different temperatures. We observed that, depending on the vendor, the soft error rate either increases or slightly decreases with temperature, even in devices belonging to the same technology node. SPICE simulations were used to investigate the temperature dependence of the cell feedback time and restoring current. The shape and magnitude of the particle-induced transient current is discussed as a function of temperature. The variability in the response is attributed to the balance of contrasting factors, such as cell speed reduction and increased diffusion with increasing temperature.


► We irradiate commercial SRAMs with wide-spectrum neutrons at different temperatures.
► Depending on the vendor the soft error rate increases or decreases with temperature.
► We study the temperature dependence of the cell feedback time and restoring current.
► The particle-induced transient currents are studied versus temperature.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 52, Issue 1, January 2012, Pages 289–293
نویسندگان
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